WANG Tao
,
XIAO Hong
,
ZHAO Tie-yong
,
QI Xiang-dong
钢铁研究学报(英文版)
In order to simulate and analyze hot strip crown and flatness accurately and efficiently, the 3-D (three-dimensional) coupled model involved in RPFEM (rigid-plastic finite element method) is improved based on the analytical model of forecasting rolling force distribution. In the analytical model, variational method is employed to solve the lateral flow of metal and influential function method is employed to calculate roll deflection, the lateral distribution of rolling force can be obtained rapidly by iterative strategy. Then the 3-D coupled model uses the result as initial distribution of rolling force to calculate roll deflection and makes the initial on-load roll gap profile close to the final value, so as to reduce iterations and increase efficiency. Compared with previous algorithms, the improved model can reduce the iterations by about 50% and shorten the computing time by about 60% on the basis of the calculation accuracy.
关键词:
rolling force
,
analytical model
,
RPFEM
,
coupled model
,
efficiency
QI Xiang-dong
,
WANG Tao
,
XIAO Hong
钢铁研究学报(英文版)
Rolling schedule not only determines the rolling process to be going smoothly, but also affects the shape accuracy and structure properties of finished strip. In order to gain good strip crown and flatness, the calculation formulas of the most suitable rolling force and bending force are deduced. By taking relatively equal load of rolling power and good shape as objective functions, the optimization mathematical models of finish rolling schedule are established. By contrast, the rolling schedules after optimization can improve the rolling mill working status and ensure the strip crown and flatness to be good. At the same time, the setting value of bending force is improved and this leaves more space for on-line shape control.
关键词:
optimization
,
rolling schedule
,
rolling force
,
bending force
,
shape
刘文鹏
,
张庆礼
,
杨华军
,
周鹏宇
,
孙敦陆
,
高进云
,
谷长江
,
罗建乔
,
王迪
,
殷绍唐
量子电子学报
doi:10.3969/j.issn.1007-5461.2011.02.018
采用固相反应法制备了Bi3+、Eu3+、Tb3+掺杂的Lu3TaO7.测量了样品的X射线衍射谱、激发和发射光谱及荧光衰减曲线.三种离子掺杂的Lu3TaO7均呈现出强的荧光发射,其中Bi3+具有峰位在431 nm处的一强发射宽带,衰减寿命为16.8μs,Eu3+、Tb3+则表现出稀土离子的特征锐发射峰,衰减寿命分别为1.26 ms和1.20 ms.因此,它们均是具有潜在应用前景的重闪烁体材料.
关键词:
材料
,
闪烁体
,
Lu3TaO7
,
发光
Acta Materialia
A graded microstructure was produced in the surface layer of a pure Cu sample by means of surface mechanical attrition treatment (SMAT) [Wang K, Tao NR, Liu G, Lu J, Lu K. Acta Mater 2006;54:5281.]. The diffusion behavior of (63)Ni in such a surface layer was investigated by the radiotracer technique at temperatures <438 K. It is shown that the effective diffusivity in the top 10 mu m surface layer is more than 2 orders of magnitude higher than that along conventional high-angle grain boundaries (HAGB) in Cu of similar purity. The diffusion rate increases gradually with increasing depth up to 30-50 mu m, and then decreases with further increasing depth. The enhanced diffusivities reveal higher-energy states of various interfaces in the SMAT surface layer. The excess free energy of HAGB in this layer is estimated to be similar to 30% higher than that of conventional grain boundaries. An apparent retardation of the effective diffusion rate in the top 25 mu m surface layer is induced by tracer leakage into numerous twin-boundary-like interfaces, while the gradual decrease in interface excess free energy correlates with the observed decrease in diffusivity in the subsurface layer at depths exceeding 50 mu m. (C) 2009 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
关键词:
Nanostructured material;Surface mechanical attrition treatment;Diffusion;Grain boundaries;Twin boundaries;grain-boundary diffusion;mechanical attrition treatment;severe;plastic-deformation;nanocrystalline copper;self-diffusion;nickel;alloys;bulk;temperatures;segregation
季振国
,
周荣福
,
毛启楠
,
霍丽娟
,
曹虹
无机材料学报
doi:10.3724/SP.J.1077.2009.09217
利用反应磁控溅射法制备了半导体锡锑氧化物薄膜 (TAO). 根据霍尔效应测试结果,当Sn/Sb 原子比处于0.22~0.33范围内时,TAO薄膜是p型导电的,在此范围之外,TAO薄膜是n型导电的. 光学带隙测量结果表明,不同Sn/Sb比的TAO薄膜的禁带宽度基本相同(～3.9eV).构造了一个全透明的PN结,其中n区为Sn/Sb原子比为0.5的TAO薄膜, p区为Sn/Sb原子比为0.33的TAO薄膜.n区TAO的电极用铟锡氧化物(ITO),p区TAO的电极用Cu薄膜.实验结果表明,由于两种导电类型的TAO薄膜具有相同的禁带宽度,上述透明PN结构具有典型的准同质PN结的整流特性.
关键词:
透明半导体薄膜
,
锡锑氧化物
,
PN结
